document number: 81960 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 28-sep-10 1 silicon pin photodiode TEMD7100X01 vishay semiconductors description TEMD7100X01 is a high speed and high sensitive pin photodiode. it is a miniatur e surface mount device (smd) including the chip with a 0.23 mm 2 sensitive area and a daylight blocking filter matche d with ir emitters operating at wavelength of 830 nm to 950 nm. features ? package type: surface mount ? package form: 0805 ? dimensions (l x w x h in mm): 2 x 1.25 x 0.85 ? radiant sensitive area (in mm 2 ): 0.23 ? high radiant sensitivity ? daylight blocking filter matched with 830 nm to 950 nm emitters ? fast response times ? angle of half sensitivity: ? = 60 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? high speed photo detector ? infrared remote control ? infrared data transmission ? photo interrupters ? shaft encoders note ? test conditions see table basic characteristics note ? moq: minimum order quantity 20043-1 product summary component i ra (a) ? (deg) 0.5 (nm) TEMD7100X01 3 60 750 to 1050 ordering information ordering code packaging remarks package form TEMD7100X01 tape and reel moq: 3000 pcs, 3000 pcs/reel 0805 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 60 v power dissi pation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow solder profile fig. 8 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 270 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81960 2 rev. 1.2, 28-sep-10 TEMD7100X01 vishay semiconductors silicon pin photodiode basic characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1v breakdown voltage i r = 100 a, e = 0 v (br) 60 v reverse dark current v r = 10 v, e = 0 i ro 13na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 4pf v r = 5 v, f = 1 mhz, e = 0 c d 1.3 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 3a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 2.4 3 3.6 a angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 950 nm range of spectral bandwidth 0.5 750 to 1050 nm rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 1 10 100 1000 i ro - reverse dark current (na) t amb - ambient temperature (c) 94 8427 v r = 10 v 100 80 60 40 0.6 0.8 1.0 1.2 1.4 i ra, rel - relative reverse light current t amb - ambient temperature (c) 94 8416 v r = 5 v = 950 nm 0 100 80 60 40 20
document number: 81960 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 28-sep-10 3 TEMD7100X01 silicon pin photodiode vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - reverse light current vs. reverse voltage fig. 5 - diode capacitance vs. reverse voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant in tensity vs. angular displacement 0.001 0.01 0.1 1 10 0.01 0.1 1 10 i ra - reverse light current (a) e e - irradiance (mw/cm 2 ) 21535 v r = 5 v = 950 nm 1 10 100 0.1 1 10 100 v r - reverse voltage 1 mw/cm 2 i ra - reverse light current (a) 17026 = 950 nm 0 2 4 6 8 0.1 c d - diode capacitance (pf) v r - reverse voltage (v) 94 8430 e = 0 f = 1 mhz 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 600 700 800 900 1000 1100 21554 - wavelength (nm) s ( ) rel - relative spectral sensitivity 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81960 4 rev. 1.2, 28-sep-10 TEMD7100X01 vishay semiconductors silicon pin photodiode reflow solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 3, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c 20018
document number: 81960 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.2, 28-sep-10 5 TEMD7100X01 silicon pin photodiode vishay semiconductors blister tape dimensions in millimeters 21501
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81960 6 rev. 1.2, 28-sep-10 TEMD7100X01 vishay semiconductors silicon pin photodiode reel dimensions in millimeters of the wheel i s s upplier s pecic. form of the leave open i ss ue: 2; 26.04.10 drawing-no.: 9.800-5096.01-4 s pecication s according to din technical drawing s ? 177.8 max. ? 55 min. 8.4 +2.5 8.4 +0.15 14.4 max. ? 13 + 0.5 - 0.2 1.5 min. ? 20.2 min. z z 2:1 20875
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